Part number:
TP65H150G4LSG
Single FETs, MOSFETs
Manufacturer:
Transphorm
GAN FET N-CH 650V PQFN
Tray
RoHS:
NO
TP65H150G4LSG
: 1
: 1
1
$10.1200
$10.1200
10
$9.0800
$90.8000
100
$7.4400
$744.0000
500
$6.3400
$3,170.0000
1000
$5.3400
$5,340.0000
3000
$4.7000
$14,100.0000
TP65H150G4LSG
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | 3-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
