Part number:
TP65H050WS
Single FETs, MOSFETs
Manufacturer:
Transphorm
GANFET N-CH 650V 34A TO247-3
Tube
RoHS:
YES
TP65H050WS
: 1
: 1
1
$35.3400
$35.3400
30
$28.6000
$858.0000
120
$26.9200
$3,230.4000
510
$24.4000
$12,444.0000
TP65H050WS
PDF1
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
