Part number:
NVH4L030N120M3S
Single FETs, MOSFETs
Manufacturer:
Sanyo Semiconductor/onsemi
SILICON CARBIDE (SIC) MOSFET-ELI
Tube
RoHS:
YES
NVH4L030N120M3S
: 1
: 1
1
$48.8400
$48.8400
30
$40.5000
$1,215.0000
120
$37.9600
$4,555.2000
510
$32.4000
$16,524.0000
NVH4L030N120M3S
PDF1
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 30A, 18V |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 15mA |
| Supplier Device Package | TO-247-4L |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 800 V |
| Qualification | AEC-Q101 |
