TYPE | DESCRIPTION |
Mfr | GeneSiC Semiconductor |
Series | SiC Schottky MPS™ |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-2 |
Mounting Type | Through Hole |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Technology | SiC (Silicon Carbide) Schottky |
Capacitance @ Vr, F | 4577pF @ 1V, 1MHz |
Current - Average Rectified (Io) | 122A |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Voltage - DC Reverse (Vr) (Max) | 1700 V |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
Current - Reverse Leakage @ Vr | 40 µA @ 1700 V |