Part number:
G12P10TE
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
P-100V,-12A,RD(MAX)<200M@-10V,VT
Tube
RoHS:
YES
G12P10TE
: 1
: 1
1
$1.5200
$1.5200
10
$1.3200
$13.2000
100
$0.9000
$90.0000
500
$0.7600
$380.0000
1000
$0.6400
$640.0000
2000
$0.5800
$1,160.0000
5000
$0.5400
$2,700.0000
10000
$0.5000
$5,000.0000
G12P10TE
PDF1
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
