Part number:
WNSC2D12650TJ
Single Diodes
Manufacturer:
WeEn Semiconductors Co., Ltd
DIODE SIL CARBIDE 650V 12A 5DFN
Tape & Reel (TR)
RoHS:
NO
WNSC2D12650TJ
: 1
: 1
1
$6.8000
$6.8000
10
$5.7000
$57.0000
100
$4.6200
$462.0000
500
$4.1000
$2,050.0000
1000
$3.5200
$3,520.0000
3000
$3.3000
$9,900.0000
6000
$3.1800
$19,080.0000
WNSC2D12650TJ
PDF1
| TYPE | DESCRIPTION |
| Mfr | WeEn Semiconductors Co., Ltd |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
