Part number:
SIHB6N80AE-GE3
Single FETs, MOSFETs
Manufacturer:
Vishay / Siliconix
E SERIES POWER MOSFET D2PAK (TO-
Tube
RoHS:
YES
SIHB6N80AE-GE3
: 1
: 1
1
$3.9800
$3.9800
50
$3.2000
$160.0000
100
$2.6400
$264.0000
500
$2.2200
$1,110.0000
1000
$1.9000
$1,900.0000
2000
$1.8000
$3,600.0000
5000
$1.7200
$8,600.0000
10000
$1.6800
$16,800.0000
SIHB6N80AE-GE3
PDF1
| TYPE | DESCRIPTION |
| Mfr | Vishay / Siliconix |
| Series | E |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
