Part number:
G60N06T
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Tube
RoHS:
YES
G60N06T
: 1
: 1
1
$1.6000
$1.6000
50
$1.3200
$66.0000
100
$0.9600
$96.0000
500
$0.8000
$400.0000
1000
$0.6800
$680.0000
2000
$0.6000
$1,200.0000
5000
$0.5800
$2,900.0000
10000
$0.5400
$5,400.0000
G60N06T
PDF1
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | TrenchFET® |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 5A, 10V |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 30 V |
