Part number:
FBG20N04ASH
Single FETs, MOSFETs
Manufacturer:
EPC Space
GAN FET HEMT 200V 4A 4FSMD-A
Bulk
RoHS:
NO
FBG20N04ASH
: 1
: 1
1
$785.5000
$785.5000
10
$755.9800
$7,559.8000
FBG20N04ASH
PDF1
| TYPE | DESCRIPTION |
| Mfr | EPC Space |
| Series | e-GaN® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 100 V |
