Part number:
CGD65B200S2-T13
Single FETs, MOSFETs
Manufacturer:
Cambridge GaN Devices
650V GAN HEMT, 200MOHM, DFN5X6.
Tape & Reel (TR)
RoHS:
YES
CGD65B200S2-T13
: 1
: 1
1
$9.1000
$9.1000
10
$7.6400
$76.4000
100
$6.1800
$618.0000
500
$5.5000
$2,750.0000
1000
$4.7000
$4,700.0000
2000
$4.4200
$8,840.0000
5000
$4.2600
$21,300.0000
CGD65B200S2-T13
PDF1
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
