Part number:
CGD65B130S2-T13
Single FETs, MOSFETs
Manufacturer:
Cambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN5X6.
Tape & Reel (TR)
RoHS:
YES
CGD65B130S2-T13
: 1
: 1
1
$12.8400
$12.8400
10
$10.7800
$107.8000
100
$8.7200
$872.0000
500
$7.7600
$3,880.0000
1000
$6.6400
$6,640.0000
2000
$6.2600
$12,520.0000
5000
$6.0000
$30,000.0000
CGD65B130S2-T13
PDF1
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
