Part number:
CGD65A130S2-T13
Single FETs, MOSFETs
Manufacturer:
Cambridge GaN Devices
650V GAN HEMT, 130MOHM, DFN8X8.
Tape & Reel (TR)
RoHS:
YES
CGD65A130S2-T13
: 1
: 1
1
$12.5000
$12.5000
10
$10.7200
$107.2000
100
$8.9200
$892.0000
500
$7.8800
$3,940.0000
1000
$7.1000
$7,100.0000
3500
$6.6400
$23,240.0000
CGD65A130S2-T13
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
